pd - 9.1253 hexfet ? power mosfet irfu2605 irfr2605 v dss = 55v r ds(on) = 0.075 w i d = 19a ultra low on-resistance esd protected surface mount (irfr2605) straight lead (irfu2605) 150c operating temperature repetitive avalanche rated fast switching description fourth generation hexfets from international rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure. these benefits, combined with the ruggedized device design that hexfets are known for, provide the designer with extremely efficient and reliable device for use in a wide variety of applications. the d-pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. the straight lead version (irfu series) is for through-hole mounting applications. power dissipation levels up to 1.5 watts are possible in typical surface mount applications. absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 19 i d @ t c = 100c continuous drain current, v gs @ 10v 12 a i dm pulsed drain current 76 p d @t c = 25c power dissipation 50 p d @t c = 25c power dissipation (pcb mount)** 3.1 linear derating factor 0.40 linear derating factor (pcb mount)** 0.025 v gs gate-to-source voltage 20 v e as single pulse avalanche energy 100 mj i ar avalanche current 12 a e ar repetitive avalanche energy 5.0 mj dv/dt peak diode recovery dv/dt 4.5 v/ns t j, t stg junction and storage temperature range -55 to + 150 soldering temperature, for 10 seconds 300 (1.6mm from case) v esd human body model, 100pf, 1.5k w 2000 v thermal resistance parameter min. typ. max. units r q jc junction-to-case ? ? 2.5 r q ja junction-to-ambient (pcb mount)** ? ? 40 c/w r q ja junction-to-ambient ? ? 62 ** when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. w/c w c g d s d - p a k t o - 2 5 2 a a i - p a k t o - 2 5 1 a a
parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 ??? ??? v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient ??? 0.051 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.085 w v gs = 10v, i d = 11a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 3.6 ??? ??? s v ds = 25v , i d = 11a ??? ??? 25 v ds = 55v , v gs = 0v ??? ??? 250 v ds = 44v , v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 10 v gs = 20v gate-to-source reverse leakage ??? ??? -10 v gs = -20v q g total gate charge ??? ??? 23 i d = 11a q gs gate-to-source charge ??? ??? 5.4 nc v ds = 44v q gd gate-to-drain ("miller") charge ??? ??? 10 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 7.1 ??? v dd = 25v t r rise time ??? 56 ??? i d = 11a t d(off) turn-off delay time ??? 31 ??? r g = 20 w t f fall time ??? 39 ??? r d = 2.2 w, see fig. 10 between lead, 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 420 ??? v gs = 0v c oss output capacitance ??? 250 ??? pf v ds = 25v c rss reverse transfer capacitance ??? 67 ??? ? = 1.0mhz, see fig. 5 notes: parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.5 v t j = 25c, i s = 11a, v gs = 0v t rr reverse recovery time ??? 67 100 ns t j = 25c, i f = 11a q rr reverse recovery charge ??? 0.18 0.26 c di/dt = 100a/s t on forward turn-on time repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) v dd = 25v, starting t j = 25c, l = 830h r g = 25 w , i as = 11a. (see figure 12) i sd 11a, di/dt 110a/s, v dd v (br)dss , t j 150c pulse width 300s; duty cycle 2%. source-drain ratings and characteristics electrical characteristics @ t j = 25c (unless otherwise specified) intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) ??? ??? 72 ??? ??? 18 a nh l d internal drain inductance ??? 4.5 ??? l s internal source inductance ??? 7.5 ??? i dss drain-to-source leakage current i gss ns a g d s g d s a irfr2605 irfu2605
fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 1. typical output characteristics, t c = 25 o c fig 2. typical output characteristics, t c = 150 o c 0 . 1 1 1 0 1 0 0 0 . 0 1 0 . 1 1 1 0 1 0 0 i , d r a i n - t o - s o u r c e c u r r e n t ( a ) d v , d r a i n - t o - s o u r c e v o l t a g e ( v ) d s v g s t o p 1 5 v 1 0 v 8 . 0 v 7 . 0 v 6 . 0 v 5 . 5 v 5 . 0 v b o t t o m 4 . 5 v 2 0 s p u l s e w i d t h ? t = 2 5 c c a 4 . 5 v 0 . 1 1 1 0 1 0 0 0 . 0 1 0 . 1 1 1 0 1 0 0 i , d r a i n - t o - s o u r c e c u r r e n t ( a ) d v , d r a i n - t o - s o u r c e v o l t a g e ( v ) d s v g s t o p 1 5 v 1 0 v 8 . 0 v 7 . 0 v 6 . 0 v 5 . 5 v 5 . 0 v b o t t o m 4 . 5 v 2 0 s p u l s e w i d t h ? t = 1 5 0 c c a 4 . 5 v 1 10 100 4 5 6 7 8 9 10 t = 2 5 c t = 1 5 0 c j j g s v , g a t e - t o - s o u r c e v o l t a g e ( v ) d i , d r a i n - t o - s o u r c e c u r r e n t ( a ) a v = 2 5 v 2 0 s p u l s e w i d t h ? d s 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , j u n c t i o n t e m p e r a t u r e ( c ) r , d r a i n - t o - s o u r c e o n r e s i s t a n c e d s ( o n ) ( n o r m a l i z e d ) v = 1 0 v ? g s a ? i = 1 9 a d irfr2605 irfu2605
fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage 0 200 400 600 800 1000 1 10 100 c , c a p a c i t a n c e ( p f ) d s v , d r a i n - t o - s o u r c e v o l t a g e ( v ) a v = 0 v , f = 1 m h z c = c + c , c s h o r t e d c = c c = c + c g s i s s g s g d d s r s s g d o s s d s g d c ? i s s c ? o s s c ? r s s 0 4 8 12 16 20 0 5 10 15 20 25 q , t o t a l g a t e c h a r g e ( n c ) g v , g a t e - t o - s o u r c e v o l t a g e ( v ) g s a f o r t e s t c i r c u i t ? s e e f i g u r e 1 3 i = 1 1 a d ? v = 4 4 v ? v = 2 6 v d s d s 0.1 1 10 100 0.0 0.4 0.8 1.2 1.6 t = 2 5 c t = 1 5 0 c j j v = 0 v ? g s v , s o u r c e - t o - d r a i n v o l t a g e ( v ) i , r e v e r s e d r a i n c u r r e n t ( a ) s d s d a 1 10 100 1000 0.1 1 10 100 1000 v , d r a i n - t o - s o u r c e v o l t a g e ( v ) d s i , d r a i n c u r r e n t ( a ) o p e r a t i o n i n t h i s a r e a l i m i t e d b y r d d s ( o n ) ? t = 2 5 c ? t = 1 5 0 c s i n g l e p u l s e c j 1 0 s 1 0 0 s 1 m s a irfr2605 irfu2605
fig 10a. switching time test circuit v ds 10 v pulse width 1 s duty factor 0.1 % fig 9. maximum drain current vs. case temperature fig 10b. switching time waveforms r d v gs v dd r g d.u.t. fig 11. maximum effective transient thermal impedance, junction-to-case 0 4 8 12 16 20 25 50 75 100 125 150 c i , d r a i n c u r r e n t ( a m p s ) d t , c a s e t e m p e r a t u r e ( c ) a 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t , r e c t a n g u l a r p u l s e d u r a t i o n ( s e c ) 1 d = 0 . 5 0 0 . 0 1 0 . 0 2 0 . 0 5 0 . 1 0 0 . 2 0 s i n g l e p u l s e ( t h e r m a l r e s p o n s e ) a t h e r m a l r e s p o n s e ( z ) t h j c p t 2 1 t d m n o t e s : ? 1 . d u t y f a c t o r d = t / t 2 . p e a k t = p x z + t ? ? ? ? 1 2 j d m t h j c c ? ? ? irfr2605 irfu2605
irfr2605 irfu2605 10 v fig 13a. basic gate charge waveform fig 13b. gate charge test circuit fig 12b. unclamped inductive waveforms fig 12c. maximum avalanche energy vs. drain current 0 40 80 120 160 200 25 50 75 100 125 150 j e , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) a s a s t a r t i n g t , j u n c t i o n t e m p e r a t u r e ( c ) i t o p 4 . 9 a 7 . 0 a b o t t o m 1 1 a d v = 2 5 v d d fig 12a. unclamped inductive test circuit 10 v
fig 14. for n-channel hexfets * vgs = 5v for logic level devices peak diode recovery dv/dt test circuit r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer * irfr2605 irfu2605
irfr2605 irfu2605
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/
|
